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对注FMOSFET和CC4007电路进行了60Co－γ辐照和退火行为的分析研究，结果表明：栅介质中F的引入，能明显减小CC4007电路辐射感生阈电压的漂移和静态漏电流的增长；抑制高温贮藏引起的CC4007电路漏电流的退化，减小辐射感生氧化物电荷和界面态在退火过程中的再生长速度．F－Si键的形成将减小MOS栅氧介质的电导率．
The results show that the introduction of F in the gate dielectric can significantly reduce the induced threshold voltage drift and the static leakage current of the CC4007 circuit. Inhibit the degradation of the leakage current of the CC4007 circuit caused by high temperature storage, and reduce the re-growth rate of the radiation-induced oxide charge and interface state during annealing. The formation of F-Si bonds will reduce the conductivity of the MOS gate dielectric.