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介绍了一种直接利用离子注入机对AlGaN/GaN高电子迁移率晶体管(HEMT)器件的栅下进行氟(F)离子注入的方法,成功实现了增强型HEMT器件,阈值电压从耗尽型器件的-2.6 V移动到增强型器件的+1.9 V。研究了注入剂量对器件性能的影响,研究发现随着注入剂量的不断增加,阈值电压不断地正向移动,但由于存在高能F离子的注入损伤,器件的正向栅极漏电随着注入剂量的增加而不断上升,阈值电压正向移动也趋于饱和。因此,提出采用在AlGaN/GaN异质结表面沉积栅介质充当能量吸收层,降低离子注入过程中的损伤,成功实现了阈值电压为+3.3 V,饱和电流密度约为200 mA/mm,同时具有一个较高的开关比109的增强型金属-绝缘层-半导体HEMT(MIS-HEMT)器件。
A method for directly implanting fluorine (F) ions into the gate of an AlGaN / GaN HEMT device by using an ion implanter is described. An enhanced HEMT device is successfully implemented. The threshold voltage of the HEMT device is reduced from a depletion device -2.6 V to +1.9 V for enhanced devices. The effects of implantation dose on the device performance were studied. It was found that as the implantation dose increased, the threshold voltage continued to move forward. However, due to the implanted damage of high-energy F ions, the forward gate leakage of the device increased with the implantation dose Increase and continue to rise, the threshold voltage is also moving toward the saturation. Therefore, a method of depositing a gate dielectric on the surface of the AlGaN / GaN heterojunction to act as an energy absorption layer to reduce the damage during the ion implantation has been successfully implemented with a threshold voltage of +3.3 V and a saturation current density of about 200 mA / mm, A higher switching ratio of 109 enhanced metal-insulator-semiconductor HEMT (MIS-HEMT) devices.