直拉硅单晶历来都是在真空或氩气氛条件下生长的。在真空中生长,有利于杂质挥发,但电阻率不易控制;在氩气氛条件下生长,则恰好相反,但需消耗大量氩气。特别在硅单晶生产进入大容量化之后,氩气的消耗是相当惊人的。如果高纯氩气的售价不能大幅度下降,硅单晶的成本也就无法降低。另外,直拉硅单晶工艺中用到石英坩埚。石英即二氧化硅,在熔硅与石英的反应中势必有大量氧被溶解,从而增加了硅单晶中的氧 Czochralski silicon has always been grown under vacuum or argon atmosphere. In vacuum growth, is conducive to volatile impurities, but not easy to control the resistivity; growth in argon atmosphere, then the opposite, but need to consume a large amount of argon. Argon gas consumption is quite impressive, especially after the silicon single crystal production has been mass-produced. If the price of high-purity argon can not be significantly reduced, the cost of silicon can not be reduced. In addition, the Czochralski silicon single crystal process used in quartz crucible. Quartz or silica, the reaction of molten silicon and quartz is bound to have a lot of oxygen is dissolved, thereby increasing the oxygen in the silicon single crystal