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已经有多种方法分析了LiF作为电子注入缓冲层对有机电致发光器件的影响,用LiF/Al双层阴极和发光层Alq3制成的有机电致发光器件(OLED),可以降低器件的开启电压,提高器件的发光效率、发光亮度。文章主要对OLEDs(A):Al/Alq3/ITO和(B):Al/LiF(1nm)/Alq3/ITO的C-V特性进行了研究,当在阴极和发光层Alq3之间加上1nm厚的LiF层作为电子注入缓冲层以后,器件的电容由不加LiF时的72500pF减小到12500pF,由于电容的减小,有效地降低了器件的功耗,进而提高了器件的寿命,节约了能源,进一步改善了器件的性能。
There are many ways to analyze the effect of LiF as an electron injection buffer layer on the organic electroluminescent device. An organic electroluminescent device (OLED) made of a LiF / Al double layer cathode and a light emitting layer Alq3 can reduce the device turn-on Voltage, improve the luminous efficiency of the device, brightness. The CV characteristics of OLEDs (A): Al / Alq3 / ITO and (B): Al / LiF (1nm) / Alq3 / ITO are mainly studied. When a thickness of 1 nm is added between the cathode and the light emitting layer Alq3 After the layer is injected into the buffer layer as an electron, the capacitance of the device is reduced from 72500pF without LiF to 12500pF. As the capacitance is reduced, the power consumption of the device is effectively reduced, thereby increasing the lifetime of the device and saving energy. Further, Improved device performance.