近来,人们正在开发许多种绝缘体上硅膜(SOI)材料工艺。这些工艺的每种电气或物理特性都会影响其潜在应用。本文描述了哈里斯半导体公司开发的三种SOI材料工艺的特性研究,即SIMOS,按比例缩小介质隔离及圆片粘合工艺。本文还评论了这些材料质量的现状,报道了制成的典型CMOS器件的电气及辐射的响应特性,并评述了这三种工艺的生存能力。 Recently, many silicon-on-insulator (SOI) material processes are being developed. Each of these electrical or physical properties of the process affects its potential application. This article describes the characterization of three SOI material processes developed by Harris Semiconductor, SIMOS, a scaled media isolation and wafer bonding process. The paper also reviews the current status of the quality of these materials, reports the electrical and radiation response characteristics of the typical CMOS devices made and comments on the viability of these three processes.