日本理化学研究所与日本轻金属公司共同开发,在金属铝表面注入氮离子制成绝缘性的氮化铝薄膜。氮化铝导热性很好,是一种超大规模集成电路衬底的新材料,引人注目。采用该法能容易地在单晶铝板上制备单晶氮化铝,预料可将其作为衬底材料,而且提高了铝的硬度,还期待创出其他新用途。 Japan Institute of Chemistry and Japan’s light metal company to jointly develop aluminum metal surface in the injection of nitrogen ions made of insulating aluminum nitride film. Aluminum nitride has good thermal conductivity and is a new material for a very large-scale integrated circuit substrate, attracting attention. Using this method, single crystal aluminum nitride can be easily prepared on a single crystal aluminum plate, which is expected to be used as a substrate material, and the hardness of aluminum is increased, and other new uses are also expected.