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利用等离子体增强化学气相淀积工艺在p型单晶硅(111)衬底上制备了厚度为70、150、450nm的SiO2薄膜和100、1702、20 nm的Si3N4薄膜,并使用纳米压入仪对薄膜进行了纳米力学测试与分析.薄膜在不同载荷下的硬度和弹性模量计算采用Oliver-Pharr方法.在测量两种薄膜的硬度时没有发现压痕尺寸效应.SiO2薄膜的弹性模量与压入深度的依赖关系不明显,但与薄膜厚度的依赖关系较明显,薄膜厚度的增加将导致弹性模量显著减小,而Si3N4的弹性模量与薄膜厚度的依赖关系不明显,但与压入深度的依赖关系较明显,会随着压入深度的增加而逐渐增加到某一定值.
SiO2 films with thickness of 70,150,450 nm and Si3N4 films with sizes of 100,1702 and 20 nm were prepared on p-type single-crystalline silicon (111) substrate by plasma-enhanced chemical vapor deposition (PVDF) Nano-mechanical testing and analysis of the films were carried out.Oliver-Pharr method was used to calculate the hardness and elastic modulus of the films under different loads.No indentation size effect was observed when the hardness of the films was measured.The elastic modulus The dependency of press depth is not obvious, but the dependence on film thickness is more obvious. The increase of film thickness will lead to a significant decrease of elastic modulus, while the elastic modulus of Si3N4 does not depend on the film thickness obviously. However, Dependency depth into the more obvious, with the depth of indentation and gradually increased to a certain value.