论文部分内容阅读
随着微电子产业的不断发展,刻蚀特征尺度达到纳米级,等离子体刻蚀工艺过程机理研究越来越受到重视.刻蚀表面仿真是研究离子刻蚀特性的重要方法.在离子刻蚀表面仿真中,离子刻蚀产额模型是研究刻蚀机理的重要模型,也是元胞自动机等仿真方法的重要基础.为了解决利用传统方法无法得到准确刻蚀产额模型参数的问题,本文提出一种基于刻蚀速率匹配的离子刻蚀产额优化建模方法,该方法以实际刻蚀速率与模拟刻蚀速率之间的均方差为优化目标,利用基于分解的多目标进化算法来优化离子的刻蚀产额模型参数,并将得到的刻蚀产额模型参数应用到采用元胞方法的刻蚀工艺的实际仿真过程中.实验结果表明了该刻蚀产额优化建模方法的有效性.
With the continuous development of the microelectronics industry, the scale of the etching features reaches the nanometer scale, and the research on the plasma etching process has drawn more and more attention. The etching surface simulation is an important method to study the ion etching characteristics. In the simulation, the ion etching yield model is an important model for studying the etching mechanism and also an important basis for simulation methods such as cellular automata.In order to solve the problem that the traditional etching method can not get the accurate etching yield model parameters, Based on the etch rate matching method of ion etching yield optimization modeling method, the method of the actual etching rate and the simulated etching rate between the mean square error optimization goal, the use of decomposition based multi-objective evolutionary algorithm to optimize the ion And the parameters of etch yield model are used, and the parameters of the etch yield model are applied to the actual simulation process of the etching process using the cellular method.The experimental results show the effectiveness of the method for modeling the yield of etch.