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采用n型掺杂背面入射AlGaAs/GaAs量子阱结构,用MOCVD外延生长和GaAs集成电路工艺,设计制作了大面积AlGaAs/GaAs QWIP单元测试器件和128×128、128×160、256×256 AlGaAs/GaAsQWIP焦平面探测器阵列。用液氮温度下的暗电流和傅里叶红外响应光谱对单元测试器件进行了评估,针对不同材料结构,实现了9μm和10.9μm的截止波长;黑体探测率最高达到2.6×109 cm.Hz1/2.W-1。将128×128 AlGaAs/GaAs QWIP阵列芯片与CMOS读出电路芯片倒装焊互连,成功演示了室温环境下目标的红外热成像;并进一步讨论了提高QWIP组件成像质量的途径。
An n-type doped AlGaAs / GaAs quantum well structure is used for backside incidence. Large area AlGaAs / GaAs QWIP unit test devices and 128 × 128,128 × 160,256 × 256 AlGaAs / GaAs quantum well devices are designed and fabricated by MOCVD epitaxial growth and GaAs integrated circuit technology. GaAsQWIP focal plane detector array. The unit test device was evaluated by dark current and Fourier transform infrared (FTIR) response spectra at liquid nitrogen temperature. The cut-off wavelengths of 9μm and 10.9μm were obtained for different materials and the detection rate of blackbody was up to 2.6 × 109cm.Hz1 / 2.W-1. The 128 × 128 AlGaAs / GaAs QWIP array chips were flip-chip interconnected with the CMOS readout chip, and the target infrared thermal imaging at room temperature was successfully demonstrated. The ways to improve the imaging quality of QWIP components were discussed.