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GaAs/GaAlAs high power window stripe lasers are developed with straight ac-tive layer in region adjacent to facet and curved active layer in central part.Only one-step liq-uid-phase epitaxy(LPE)growth is used in the fabvrication to from two internal current patheslaterally,allowing of a very simple fabrication process.Optical coupling from two stimulatingregions makes less beam divergence.The steady state analysis of such laser structure agreewell with experimental results.
GaAs / GaAlAs high power window stripe lasers are developed with straight ac-tive layer in region adjacent to facet and curved active layer in central part. Only one-step liq-uid-phase epitaxy (LPE) growth is used in the fabvrication to from two internal current patheslaterally, allowing of a very simple fabrication process. Optical coupling from two stimulating regions makes less beam divergence. steady state analysis of such laser structure agreewell with experimental results.