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利用脉冲激光沉积(PLD)方法在Si衬底上制备了ZnO单晶体薄膜,并在不同温度下生长了Ag膜作为肖特基电极,研究了Ag与ZnO的接触特性.利用X射线衍射仪、扫描电子显微镜和I-V测试方法对样品的晶体质量、结构和电学性质进行了分析.结果表明,ZnO薄膜具有高度的c轴择优取向,Ag膜随生长温度的不同的晶体质量有较大差异.样品在室温下的I-V测试结果表明Ag电极的生长温度对Ag/ZnO接触性能有重要影响.在150℃和200℃生长的Ag电极实现了Ag与ZnO的肖特基接触,电极生长温度低于150℃和高于200℃的样品Ag与ZnO均为欧姆接触.经过分析,肖特基接触的形成依赖于在Ag与ZnO接触界面处形成的p型反型层.
ZnO single crystal thin films were prepared on Si substrate by pulsed laser deposition (PLD) method, and Ag films were grown as Schottky electrodes at different temperatures. The contact characteristics between Ag and ZnO were investigated. By X-ray diffraction The crystal quality, structure and electrical properties of the samples were analyzed by SEM, SEM and TEM.The results show that the ZnO films have a high c-axis preferred orientation and the Ag films have different crystal quality with different growth temperature.The results show that The results of IV at room temperature show that the growth temperature of Ag electrode has an important influence on the Ag / ZnO contact properties.The Ag electrodes grown at 150 ℃ and 200 ℃ achieved the Schottky contact of Ag and ZnO, the electrode growth temperature is below 150 ℃ And Ag and ZnO both have ohmic contact with samples above 200 ° C. The Schottky contact formation is analyzed by the dependence of the p-type inversion layer formed at the Ag-ZnO contact interface.