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本文介绍了32×32面阵InSb电荷注入器件(CID)工作原理,着重于面阵结构的设计思想,InSb MIS结构电特性分析,及面阵器件工艺实现方法。并给出器件性能分析结果。
In this paper, the working principle of 32 × 32 array InSb charge injection device (CID) is introduced. The design principle of the array structure, the electrical characteristics of InSb MIS structure and the method of surface area device fabrication are emphasized. And gives the device performance analysis results.