【摘 要】
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A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation.Under illumination of Ni-63 source with an app
【机 构】
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Micro and Nano Electromechanical Systems Laboratory, Northwestern Polytechnical University, Xi’an 71
论文部分内容阅读
A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation.Under illumination of Ni-63 source with an apparent activity of 4mCi/cm2, an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm2 are measured. A power conversion effciency of 1.2% is obtained.The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.
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