在玻璃基底和四种硅基底上用反应式直流磁控溅射法制备了ZnO薄膜．用AES和XRD对薄膜结构和组分进行测试，结果表明，五种基底上生长的ZnO薄膜在不同程度上都具有优良的纵向均匀性、明显的c轴择优取向和较高的结晶度，而硅基底上薄膜的结构普遍优于玻璃基底上沉积的薄膜。 ZnO thin films were prepared by reactive DC magnetron sputtering on glass substrates and four kinds of silicon substrates. The structure and composition of the films were tested by AES and XRD. The results show that ZnO films grown on the five substrates have excellent longitudinal uniformity, obvious c-axis preferred orientation and high crystallinity to varying degrees The structure of the film on a silicon substrate is generally better than the film deposited on a glass substrate.