【摘 要】
：
Lattice-matched InGaAs/InP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with tertiarybutylarsine (TBAs), tertiarybutylphos
【机 构】
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State Key Laboratory of Crystal Materials,Institut für Halbleitertechnik
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Lattice-matched InGaAs/InP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) as the group Ⅴ sources. The results of X-ray diffraction on InGaAs/InP single herterostructure show that there is a compressive-strained interfacial layer at the InP-to-lnGaAs interface. X-ray diffraction of InGaAs/InP superlattices is successfully simulated by using the same interfacial layer. TBAs purging of InP surface has a significant influence on the interfacial strain. A novel gas switching sequence, which switches group Ⅲ to the run line earlier than TBAs, is proposed to reduce this interfacial strain. As a result,the average compressive strain of superlattices decreases, and a blue shift of photoluminescence (PL)peak energy and narrowing in PL width are obtained.
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