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利用含时二维热传导模型分析了蓝宝石衬底上生长、制作的脊形InGaN激光器内波导层的温度分布和时间演化规律.由于较大的阈值电流和电压以及较差的衬底导热性能,脊形下波导层内会产生较高温升并在脊形内外形成较大的温度台阶.由于脊形波导的弱自建波导特性,这一温度台阶会对侧向模式的限制产生较大的影响.短脉冲工作下的时间分辨L-I测试以及时间分辨远场和光谱测试结果显示,脊形内外的温度台阶会改善波导对高阶模的限制,导致器件的阈值电流下降,斜率效率升高.而有源区的温升又会导致斜率效率的严重下降.
The temperature distribution and time evolution of the waveguide layer in ridge-shaped InGaN lasers grown on sapphire substrates were analyzed by using time-dependent two-dimensional thermal conductivity model. Due to the large threshold current and voltage and poor substrate thermal conductivity, A higher temperature rise occurs in the lower waveguide layer and a larger temperature step occurs in and out of the ridge.The temperature step has a greater impact on the lateral mode limit due to the weak self-built waveguide characteristics of the ridge waveguide. The time-resolved LI test and time-resolved far-field and spectral test under short-pulse operation show that the temperature steps inside and outside the ridge improve the waveguide’s limitation on the high-order mode, which leads to the decrease of the threshold current and the slope efficiency of the device. The temperature rise will in turn lead to a serious decline in slope efficiency.