自对准FET(Self-Aligned FET) 作为超过Si的下一代超高速集成电路的关键器件,GaAsMESFET是很有希望的。为了提高其高速性能,还需要增加跨导g_m,其主要的途径是减少源一栅间的串联电阻R_S。作为其技术之一,有相对栅电极能自调整地掺杂高浓度N~+层的方法,这样制作的器件一般标为自对准FET。关于能降低R_S的N~+层掺杂技术,采用多层抗蚀剂的自对准注入N~+层技术(SAINT)等。现在用GaAsMESFET能得到的g_m已为当初的 GaAsMESFETs are promising as self-aligned FETs as the key device for next-generation ultra-high speed integrated circuits over Si. In order to improve its high-speed performance, it is necessary to increase the transconductance g_m. The main approach is to reduce the series resistance R_S between the source and the gate. As one of its technologies, a relatively gate electrode can be self-adjustingly doped with a high-concentration N + layer. The devices thus fabricated are generally designated as self-aligned FETs. N ~ + layer doping technology for reducing R_S, N + layer technology (SAINT) using multi-layer resist, and the like. Now with GaAsMESFET can get g_m has been the original