进入纳米尺度后,单粒子瞬态(SET)成为高能粒子入射VLSI产生的重要效应,准确、可靠的SET模拟对评估VLSI的可靠性有着重要的影响。以反相器为例,针对脉冲峰值和半高全宽两个指标,研究了电路模拟中影响SET的因素,主要有电流脉冲幅值、脉冲宽度、负载电容、环境温度及器件尺寸。通过对45和65 nm两种技术节点下的电路的仿真,研究了这些因素对SET的影响,并探讨了可能的原因。结果显示,这些因素对SET的影响趋势和程度有很大的差异,且器件尺寸越小,这些因素对SET的影响越显著。通过设置合适的参数,可以实现电路的抗辐射加固。 After entering the nanoscale, the single-particle transient (SET) becomes an important effect of the incident VLSI of energetic particles. Accurate and reliable SET simulation has a significant impact on the reliability of VLSI assessment. Taking the inverter as an example, the influence factors of SET in the circuit simulation are studied for two indexes: peak pulse and full width at half maximum. The main factors are current pulse amplitude, pulse width, load capacitance, ambient temperature and device size. By simulating the circuit under 45 and 65 nm technology nodes, the influence of these factors on SET is studied and the possible reasons are discussed. The results show that these factors have a great influence on the trend and extent of SET, and the smaller the device size, the more significant the impact of these factors on SET. By setting the appropriate parameters, you can achieve the circuit radiation reinforcement.