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我们成功合成了TaN薄膜原子层淀积的高纯有机钽先驱物并使其特性化,同时对这些先驱物的汽压和热稳定性进行了研究。根据汽压分析发现,TBTEMT比所有其它已发表的液体TaN先驱物(包括TBTDET、TAITMATA和IPTDET)具有更高的汽压。用1HNMR技术研究了这些烷基先驱物的热稳定性。结果表明,与乙二烯基先驱物相比,对于TBTDET和TBTEMT材料,特丁基群是最稳定的基群。TaN先驱物热稳定性按以下次序下降:TBTDET>PDMAT>TBTEMT。最后,通过对金属中央周围的配合基体进行轻微的调整使先驱物汽压和热稳定性处于良好的状态。
We successfully synthesized and characterized TaN thin-film atomic layer deposited high-purity organic tantalum precursors, and investigated the vapor pressure and thermal stability of these precursors. Based on the vapor pressure analysis, TBTEMT was found to have a higher vapor pressure than all other published liquid TaN precursors, including TBTDET, TAITMATA and IPTDET. The thermal stability of these alkyl precursors was investigated by 1H NMR. The results show that the TBTDET and TBTEMT materials are the most stable group of TBTDETs compared to the vinylidene precursors. Thermal stability of TaN precursors decreased in the following order: TBTDET> PDMAT> TBTEMT. Finally, the vapor pressure and thermal stability of the precursor are in good condition by slight adjustments to the mating substrate around the center of the metal.