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Cree公司近日获得美国海军实验室1210万美元SiC项目的合同。开发基于SiC的高电压开关和二极管,该公司将从现在到2006年11月期间开发出器件的原型。 Cree公司先进器件部门的执行副总裁John Palmour称,“合同的第一阶段是展示10 kV、50 A的PiN整流器件和首个10 kV的SiC MOSFET;第二阶段是在此基础上按此例缩小器件的尺寸,以得到用于10 kV和110 A的模块。这些器件将被用于海军下一代航母和其他舰艇所用的供电管理设备。对极低缺陷密度的n型4 H SiC衬底材料以及外延技术,该项目也要求得到开发,以制备出大面积、高电流和高电压的器件。
Cree recently won a contract for a $ 12.1 million SiC project at the U.S. Naval Laboratory. Developed SiC-based high-voltage switches and diodes, and the company will develop a prototype of the device from now until November 2006. John Palmour, Cree’s executive vice president of Advanced Device Group, said, ”The first phase of the contract was for a 10 kV, 50 A PiN rectifier and the first 10 kV SiC MOSFET. The second phase was based on that Example Decreasing the size of the device to get modules for 10 kV and 110 A. These devices will be used for power management equipment used by the Navy’s next-generation carriers and other ships. For very low defect density n-type 4 H SiC substrates Materials and epitaxy technology, the project also demanded to be developed to produce large area, high current and high voltage devices.