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介绍了用RF溅射法制备InSb薄膜时 ,如何克服In的氧化问题的措施及防止InSb薄膜在热处理过程中继续氧化和挥发的方法。对实验结果进行了电镜和俄歇电子能谱测试分析。结果表明 ,只要控制好工艺条件 ,可以获得较好的效果。
How to overcome the problem of In oxidation and how to prevent the InSb thin film from continuing to oxidize and volatilize during the heat treatment are introduced. The experimental results were analyzed by electron microscopy and Auger electron spectroscopy. The results show that as long as the control of the process conditions, you can get better results.