基于TCAD的90nm STI应力仿真与研究(英文)

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研究了90nm CMOS工艺下浅槽隔离技术产生的x轴应力对NMOSFET电学性能的影响。用新一代集成工艺仿真软件Sentaurus TCAD对不同有源区宽度(Sa=0.4μm~3.2μm,间隔0.4μm)的90nm沟长NMOSFET进行了仿真并和测量数据进行了对比。随着有源区宽度从3.2μm减小到0.4μm,NMOSFET的饱和电流减小了7%,但其阈值电压增大了8%。这说明有源区宽度的减小使得STI应力增大,进一步减小了NMOSFET中电子迁移率和沟道中halo注入浓度的扩散,使得饱和电流退化,阈值电压增加。 The effect of x-axis stress generated by shallow trench isolation technology on the electrical performance of NMOSFETs in 90nm CMOS process was studied. A new generation of integrated process simulation software Sentaurus TCAD was used to simulate the 90nm trench length NMOSFET with different active region widths (Sa = 0.4μm ~ 3.2μm, spacing 0.4μm) and compared with the measured data. As the width of the active region is reduced from 3.2 μm to 0.4 μm, the saturation current of the NMOSFET is reduced by 7%, but its threshold voltage is increased by 8%. This shows that the decrease of the width of the active region increases the STI stress and further reduces the electron mobility in the NMOSFET and the diffusion of the halo implantation concentration in the channel, so that the saturation current degenerates and the threshold voltage increases.
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