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《Electronics Letters》1991年6月报道,TRW公司最近研制出高性能W波段PM-InGaAs HEMT二级MMIC低噪声放大器.该放大器具有优良的性能和低廉的价格.因此它适用于空间通讯、灵巧武器和相控阵雷达.器件为0.1μmT型栅平面掺杂PM-InGaAs HEMT.衬底为GaAs.0.1×40μm的器件在93.5GHz下噪声系数为2.1dB,相关增益为6.3dB.
Electronics Letters reported in June 1991 that TRW recently developed a high performance W-band PM-InGaAs HEMT secondary MMIC LNA with excellent performance and low cost, making it suitable for space communications, smart weapons And phased array radar.The device is a 0.1μm T-type gate plane doped with PM-InGaAs HEMT.The substrate with GaAs 0.1 × 40μm has a noise figure of 2.1dB at 93.5GHz and a correlation gain of 6.3dB.