采用射频磁控溅射法在有机薄膜衬底上制备出 Sn O2 ∶ Sb透明导电膜 ,并对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究 .制备的样品为多晶薄膜 ,并且保持了纯二氧化锡的金红石结构 .Sn O2 ∶ Sb薄膜中 Sb2 O3的最佳掺杂比例为 6 % .适当调节制备参数 ,可以获得在可见光范围内平均透过率大于 85 %的有机衬底 Sn O2 ∶ Sb透明导电薄膜 ,其电阻率～ 3.7× 10 - 3Ω· cm ,载流子浓度～ 1.5 5× 10 2 0 cm- 3,霍耳迁移率～ 13cm2 · V- 1 · s The SnO2: Sb transparent conductive film was prepared on the organic thin film substrate by RF magnetron sputtering, and the influence of the structure and the photoelectric properties of the film and the preparation parameters on the properties of the film were studied. The prepared samples were polycrystalline thin films , And the rutile structure of pure tin dioxide is maintained. The optimal doping ratio of Sb 2 O 3 in SnO 2: Sb thin film is 6% .According to the preparation parameters, the average transmittance in the visible range is more than 85% The substrate Sn O2: Sb transparent conductive film has a resistivity of 3.7 × 10 -3 Ω · cm, a carrier concentration of 1.55 × 10 2 cm -3, a Hall mobility of 13 cm 2 · V -1 · s