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Isolated extended drain NMOS(EDNMOS) transistors are widely used in power signal processing.The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect. By optimizing p-type epitaxial(p-epi) thickness,n-type buried layer(BLN) and nwell doping distribution,the peak electric field is decreased by 30%and the peak hole current is decreased by 60%,which obviously suppress the parasitic NPN effect.Measured I-V characteristics and transmission line pulsing(TLP) results show that the onstate breakdown voltage is increased from 28 to 37 V when 6 V V_(gs) is applied and the energy capability is improved by about 30%,while the on-state resistance remains unchanged.
By using extended-drain NMOS (EDNMOS) transistors are widely used in power signal processing. The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect. By optimizing p-type epitaxial (p-epi) thickness, n-type buried layer (BLN) and nwell doping distribution, the peak electric field is decreased by 30% and the peak hole current is decreased by 60%, which obviously suppress the parasitic NPN effect. Measured IV characteristics and transmission line pulsing (TLP) results show that the onstate breakdown voltage is increased from 28 to 37 V when 6 V V gs is applied and the energy capability is improved by about 30% while the on-state resistance remains unchanged.