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本文通过对ＳＯＳ－ＣＭＯＳ门电路４０８２进行不同偏置条件下的电离辐照实验，研究了电离辐照环境中引起ＳＯＳ－ＣＭＯＳ门电路失效的几种重要漏电机制，探讨了ＳＯＳ－ＣＭＯＳ电离辐射损伤的最劣辐照偏置条件。
In this paper, the SOS-CMOS gate 4082 under different bias ionizing irradiation experiments to study the ionizing radiation environment caused by SOS-CMOS gate failure of several important leakage mechanism was discussed SOS-CMOS ionizing radiation damage The worst radiation bias conditions.