制作小功率半导体激光器时 ,为了减小阈值电流 ,提高斜率效率 ,一般都采用深腐蚀法形成脊形结构以克服电流横向扩展。但是由于工艺的原因 ,往往使得激光器远场特性恶化 ,特别是水平发散角θ//形成多瓣。研究发现这与光刻工艺有着重要关系 ,并利用自对准自然解理边形成TiAu欧姆接触方法克服了此现象 ,改善了远场特性。 In the fabrication of low power semiconductor lasers, in order to reduce the threshold current and increase the slope efficiency, a ridge structure is generally formed by deep etching to overcome the current lateral expansion. However, due to the process, the far-field characteristics of the laser often deteriorate, especially the horizontal divergence angle θ // forms a multi-lobe. The study found that this has an important relationship with the lithography process, and the use of self-aligned natural cleavage edge TiAu ohmic contact method overcomes this phenomenon and improves the far-field properties.