铜化学机械平面化不同阻挡层浆料的应用引起了铜CMP后清洗的问题。阻挡层浆料的差异包含但不限于pH、研磨剂粒子材料和尺寸及铜腐蚀的抑制剂。为观察阻挡层浆料对清洗工艺的影响进行了清洗实验。阻挡层浆料不同于pH和所有作为铜抑制剂的BTA材料。抑制性BTA溶液的pH值将确定BTA与铜复合物的特性和随后在清洗工艺中去除这种膜的条件。因此,为了研究pH、化学成份以及阻挡层浆料留在铜表面的BTA与铜的复合物去除的化学程序的影响而改变了清洗工艺。从而发现阻挡层浆料的pH值对各种清洗设备的效力均有影响,而且,某些添加剂和两步化学清洗工艺的使用,改进了可变pH值阻挡层浆料的清洗性能。这种工作的结果表明,在最佳结果中,清洗工艺应该致力于阻挡层浆料方面。 Copper Chemical Mechanical Planarization The use of different barrier slurry causes problems after copper CMP cleaning. Differences in barrier slurry include, but are not limited to, pH, abrasive particle material and size and inhibitor of copper corrosion. To observe the impact of barrier slurry on the cleaning process was carried out cleaning experiments. The barrier slurry differs from the pH and all BTA materials as copper inhibitors. The pH of the inhibitory BTA solution will determine the characteristics of the BTA and copper composites and the conditions for subsequent removal of such membranes in the cleaning process. Therefore, the cleaning process was changed in order to study the influence of pH, chemical composition, and the chemistry of the BTA-Cu compound removal process that the barrier slurry left on the copper surface. It was thus found that the pH of the barrier slurry had an effect on the effectiveness of various cleaning devices and that the use of certain additives and two-step chemical cleaning processes improved the cleaning performance of the variable pH barrier slurry. The result of this work shows that at best the cleaning process should focus on barrier slurry.