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采用InGaAsP/InP材料系,将吸收层加到宽带隙异质结光电晶体管上,研制出了具有窄光谱响应的高增益光电晶体管(波长可选光电晶体管)。得到了光谱响应峰值约1.2μm,光谱半宽度为53μm。在峰值波长和入射光功率P_(in)为3.6μw时,这种器件呈现出高达400的光学增益。在P_(in)=10μw时,测得上升时间是18μs。还测量了器件的噪声特性,在光学偏置功率为0.1μw、频率为2 KHz时,估计器件总探测度为3.7×10~(10)cm·Hz~(1/2)/W。从理论上详细讨论了这些特性。
InGaAsP / InP materials, the absorption layer is applied to a wide bandgap heterojunction phototransistor and a high-gain phototransistor (wavelength-selective phototransistor) with a narrow spectral response has been developed. The spectral response peak was about 1.2μm and the spectral half-width was 53μm. This device exhibits an optical gain of up to 400 at a peak wavelength and an incident light power P in (3.6μw. At P_ (in) = 10μw, the measured rise time is 18μs. The noise characteristics of the device were also measured. The estimated total device detection was 3.7 × 10 ~ (10) cm · Hz ~ (1/2) / W at optical bias of 0.1μW and frequency of 2 KHz. These characteristics are discussed in detail in theory.