本文探讨了实现高频晶体管的低噪声化所需的理论,叙述了为满足这个理论目前的技术对策的进展程度,展望了今后高频晶体管的低噪声化将发展到何等地步。高频晶体管的噪声系数讨论电子产品的噪声时,最常用的是噪声系数,这个噪声系数,如同晶体管放大器一样,是在作用于电信号的器件上通过电信号时,接受信噪比的好坏程度的系数,如下所示:噪声系数 F=(输入信号对噪声比)/(输出信号对噪声比) This article explores the theory needed to achieve low noise in high frequency transistors and describes the extent to which the current technology is being addressed in order to predict the extent to which low frequency noise will be developed in the future. The noise figure of high-frequency transistors When discussing the noise of electronic products, the most commonly used is the noise figure, which, like a transistor amplifier, acts as a signal on a device that passes through the electrical signal, accepting the signal to noise ratio The coefficients of the degree are as follows: Noise Figure F = (Input Signal to Noise Ratio) / (Output Signal to Noise Ratio)