论文部分内容阅读
理论上分析了半导体量子点中浸润层跃迁(包括泄漏和俘获两个过程)对Rabi振荡退相干的影响,含浸润层跃迁的粒子数运动方程可以很好地拟合实验结果。同时还对比分析了纯失相(pure dephasing)对Rabi振荡退相干的影响。分析表明,可以用简单的纯失相强度相关衰减因子来等效地分析复杂的多能级跃迁体系的退相干特性。
The influence of the transition of wetting layer (including leakage and trapping) in semiconductor quantum dots on Rabi oscillation is theoretically analyzed. The equations of motion of particles with wetting layer transition can well fit the experimental results. The effect of pure dephasing on Rabi oscillation was also analyzed. The analysis shows that the simple degeneracy-dependent attenuation factor can be used to analyze the decoherence properties of complex multi-level transitions.