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模拟自对准硅化物技术的两步退火工艺，对超高真空（UHV）下制备的Ti／Si样品依次进行低温退火、腐蚀和高温退火。利用俄歇微探针（AES）和X射线衍射（XRD）分析样品的组分及晶相。发现高温退火后，薄膜内同时生成了Ti的硅化物及氮化物，这对发展MOS器件工艺中自对准硅、氮化物技术很有意义。另外，还利用扫描电镜（SEM）观察了薄膜形貌，用VandePauw法测量了薄膜电阻。
Simulate the two-step annealing process of salicide technology, followed by low temperature annealing, etching and high temperature annealing of Ti / Si samples prepared under ultra-high vacuum (UHV). Samples were analyzed for composition and crystal phase using Auger microprobe (AES) and X-ray diffraction (XRD). After annealing at high temperature, the silicide and nitride of Ti are simultaneously formed in the film, which is of great significance for the development of self-aligned silicon and nitride technology in the MOS device process. In addition, the morphology of the film was also observed by using a scanning electron microscope (SEM), and the sheet resistance was measured by the VandePauw method.