目前本矿氧化钽中杂质的分析是以硅为内标元素的光谱分析法。此法一方面未能较好地补偿由于氧化钽本身所含杂质硅所造成的分析误差;另一方面,对主要杂质硅的分析需要用难度较大的化学分析法进行测定(主要是难于溶解试样和环境灰尘的影响)。为此,在原有基础上增加硅等几个元素的光谱测定,并重新选择了内标元素,经试验,硅的测定下限可达30ppm,另外增加的铅等三个元素的分析,均可满足用户对产品的要求。本方法选择了光谱分析载体、内标元素,研究了组分的影响。试验了两种载体:氯化银和三氧化二镓,以基体氧化钽中钽作为分析的内标元素,缓冲剂与试 At present, the analysis of impurities in tantalum oxide in the mine is based on the spectral analysis method with silicon as the internal standard element. On the other hand, the analysis of the main impurity silicon needs to be carried out by the more difficult chemical analysis (mainly, it is difficult to dissolve the impurities in the tantalum oxide itself) Sample and environmental dust). To this end, based on the original increase of silicon and other elements of the spectrum determination, and re-select the internal standard elements, the test, the lower limit of determination of silicon up to 30ppm, the addition of lead and other three elements of the analysis can meet User requirements for the product. The method selected the spectral analysis of the carrier, internal standard elements, studied the impact of components. Two carriers were tested: silver chloride and gallium oxide, with tantalum tantalum in the matrix as the internal standard element for analysis, buffer and test