采用脉冲激光沉积法在Si(10 0 )衬底上制备了Pb(Zr0 .52 Ti0 .4 8)O3 铁电薄膜 ,并用X射线衍射 (XRD) ,扫描电镜 (SEM )对其结构、形貌以及结构随沉积时衬底温度的变化进行了研究。由脉冲激光制备薄膜的机制出发 ,从PbO ,ZrO2 和TiO2 熔融体的化学反应及应力造成能量释放引起的相变两方面分析了铅基铁电薄膜制备时衬底温度的影响。 Pb (Zr0.52Ti0.48) O3 ferroelectric thin films were deposited on Si (100) substrates by pulsed laser deposition. Their structures and morphology were characterized by X-ray diffraction (XRD) and scanning electron microscopy As well as the change of structure with substrate temperature during deposition. Based on the mechanism of pulsed laser deposition, the effects of PbO, ZrO2 and TiO2 melt on the substrate temperature during the preparation of Pb-based ferroelectric thin films were analyzed from two aspects: the chemical reaction of PbO, ZrO2 and TiO2 melt, and the phase transition caused by the stress-induced energy release.