近年来透明ZnO导电薄膜的优良电性,低廉的制造成本以及简便的制备方法受到了重视。在热镜和多层光热转换系统中,它作为太阳电池的一部分,在取代ITO薄膜等方面具有诱人的应用前景。本文报道了用射频磁控溅射技术及低温处理制备得到的低电阻率和高透明度的ZnO薄膜。 以掺杂3wt％Al_2O_3的氧化锌陶瓷为靶材,用射频磁控溅射技术制备ZnO薄膜。溅射工艺条件见表1。 In recent years, the excellent electrical conductivity of ZnO transparent conductive film, low manufacturing costs and easy preparation methods have been valued. In the thermal mirror and multilayer light-to-heat conversion system, it has an attractive application prospect as a part of the solar cell in replacing the ITO film and the like. In this paper, ZnO thin films with low resistivity and high transparency prepared by RF magnetron sputtering and low temperature treatment are reported. ZnO films doped with 3wt% Al_2O_3 were prepared by RF magnetron sputtering. Sputtering process conditions in Table 1.