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本文用实验验证了栅控PN结击穿特性的效应.得到比较完整的实验曲线,并对此进行了分析.通过求介一个特定条件下的二维泊松方程,建立了完美的V_B～V_G特性的理论模型,求得在正栅压区的分析表达式,介绍了该区域内V_B～B_G实验曲线的斜率不为(?)的现象,通过综合的理论分析,本文认为,对应着V_B～V_G特性的大部分范围.击穿电压受栅电压调制的主要原因,是空间电荷区表面角区电场受到栅电压的调制.与空间电荷区形状的变化没有很直接的关系.本章用简便的方法判别了不同样品的“击穿跌落”机理.指出(?)(?)了工艺参数的影响是形成不同观点的原因所在。此外,本文给出了具有一定的工艺参数范围的实验曲线簇,具体说明了工艺参数对V_B～V_G特性的影响。
In this paper, we verify the effect of the breakdown behavior of the gate-controlled PN junction by experiment, and get a more complete experimental curve, and analyze it.A perfect V_B ~ V_G is established by solving a two-dimensional Poisson’s equation under a specific condition Characteristics of the theoretical model was obtained in the positive grid nod analysis expression is introduced in this region V_B ~ B_G experimental slope of the phenomenon is not (?), Through a comprehensive theoretical analysis, this paper believes that the corresponding V_B ~ The main reason for the breakdown voltage to be modulated by the gate voltage is that the electric field at the surface corner of the space charge region is modulated by the gate voltage and is not directly related to the change of the shape of the space charge region.This chapter uses a simple method The mechanism of “breakdown breakdown” of different samples is discriminated, and it is pointed out that the influence of process parameters is the reason of forming different viewpoints. In addition, the experimental curves with a certain range of process parameters are given in this paper, which illustrate the influence of process parameters on the characteristics of V_B ~ V_G.