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本文利用分子束外延(MBE)技术能精确控制外延层厚度的特点,与选择性腐蚀技术相结合,实现了纳米级超薄基区宽度.利用集电极电压VCE调制中性基区宽度可以改变基极电阻,从而产生微分负电阻(NDR),根据这一物理机制,设计并研制成功性能优良的8 nm基区n-InGaP/P+-GaAs/n-InGaP负阻双异质结晶体管(NDRDHBT).该器件显示出基极电压VBE调制的“∧”型负阻集电极电流IC-集电极电压VCE特性,电流峰谷比(PVCR)趋于无穷大;表征基极电压调制电流能力的峰值电流跨导ΔIP/ΔVBE高达11.2 ms;击穿电压达到12 V,可用于高频振荡调制和高速数字电路.
In this paper, the MBE technique can precisely control the thickness of the epitaxial layer, combined with the selective etching technology to achieve the nanoscale ultrathin base width.Using the collector voltage VCE to modulate the width of the neutral base can change the base According to this physical mechanism, a n-InGaP / P + -GaAs / n-InGaP negative resistance double heterojunction transistor (NDRDHBT) with excellent performance and excellent performance has been designed and developed. . The device exhibits a “Λ” negative collector current IC-collector voltage VCE characteristic of a VBE-modulated base voltage with a current-to-valley ratio (PVCR) approaching infinity; a peak current characterizing the base voltage modulation current capability Transconductance ΔIP / ΔVBE up to 11.2 ms; breakdown voltage up to 12 V, can be used for high-frequency oscillation modulation and high-speed digital circuits.