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据Electronics Letters 1983年№11刊报道: 美国海军实验室的N.A.Papan等采用Au-Mg(1500(?))/Mo(2000(?))/Au(3000(?))结构实现了P-GaAs的高可靠低阻欧姆接触。该接触显示出良好的均匀性和与半导体的粘附性。其热稳定温度高达450℃。其接触电阻随Au-Mg层中的
According to Electronics Letters, 1983, No. 11, NAPapan et al. Of the U.S. Navy’s laboratory implemented a P-GaAs structure using Au-Mg (1500 (?)) / Mo (2000 (?)) / Au High reliability low resistance ohmic contact. This contact shows good uniformity and adhesion to semiconductors. Its thermal stability temperature up to 450 ℃. The contact resistance varies with the Au-Mg layer