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根据单电子系统半经典模型 ,采用蒙特卡罗法单电子模拟程序对电容耦合的类 CMOS单电子逻辑单元在不同参数条件下的转移特性进行数值模拟。这种模拟器的物理内涵是通过建立n沟单电子晶体管 (SET)开关单元、p沟 SET开关单元以及互补型 SET开关单元的电容电压电荷方程 ,然后根据隧穿前后系统自由能的变化来确定系统的隧穿率 ,建立电流 -电压方程来决定开关特性而得到的。
According to the semi-classical model of single-electron system, the single-electron simulation program of Monte-Carlo method was used to simulate the transfer characteristics of capacitive-coupled CMOS single-electron logic cell under different parameters. The physical connotation of this simulator is to establish the capacitance voltage charge equation of the n-channel single-electron transistor (SET) switch unit, the p-channel SET switch unit and the complementary SET switch unit, and then determine the change of the system free energy before and after tunneling The tunneling rate of the system is established by establishing the current-voltage equation to determine the switching characteristics.