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A MAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source.The experimental results show that when VDS=-7.0V,the magnetic sensitivity of the single nc-Si/c-Si heterojunction magnetic metal oxide semiconductor field effect transistor (MAGFET) with an L:W ratio of 2:1 is 21.26 mV/T, and that with an L:W ratio of 4:1 is 13.88mV/T.When the outputs of double nc-Si/c-Si heterojunction MAGFETs with an L:W ratio of 4:1 are in series,their magnetic sensitivity is 22.74 mV/T,which is an improvement of about 64% compared with that of a single nc-Si/c-Si heterojunction MAGFET.
A MAGFET using an nc-Si / c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The experimental results show that when VDS = -7.0V, the magnetic sensitivity of the single nc-Si / c-Si heterojunction magnetic metal oxide semiconductor field effect transistor (MAGFET) with an L: W ratio of 2: 1 is 21.26 mV / T, and that with an L: W ratio of 4: 1 is 13.88 mV / T.When the outputs of double nc-Si / c-Si heterojunction MAGFETs with an L: W ratio of 4: 1 are in series, their magnetic sensitivity is 22.74 mV / T , which is an improvement of about 64% compared with that of a single nc-Si / c-Si heterojunction MAGFET.