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P型硅单晶通常用来制备具有几个毫米厚的Si(Li)探测器,如果象高纯锗一样,硅单晶的纯度足够高,它不需要进行锂漂移就可制成较厚的硅探测器。此种探测器在使用时需冷却,而在保存时可回暖到室温。我们应用浙江大学研制的超纯硅单晶,制成了灵敏面积为50mm~2、厚度为1.73mm的探测器Si(Hp)-82101,在77K下,测得对~(207)Bi1063.4keV跃迁的K内转换电子能量分辨率为1.72keV,这已超过目前用高阻硅和Si(Li)探测器测量所获得的最好分辨率水平1.9keV。
P-type silicon single crystals are commonly used to make Si (Li) detectors with a thickness of several millimeters. If, like high purity germanium, the purity of the silicon single crystals is high enough that they can be made thicker without the need for lithium drift Silicon detector. Such detectors need to be cooled in use, and can be warmed to room temperature when stored. We use the ultra-pure silicon single crystal developed by Zhejiang University, made a sensitive area of 50mm ~ 2, a thickness of 1.73mm detector Si (Hp) -82101 measured at 77K ~ (207) Bi1063.4keV The transitional intra-K transition electron energy resolution is 1.72 keV, which exceeds the best resolution level of 1.9 keV currently measured with high-resistivity silicon and Si (Li) detectors.