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报道了外加低电场和衬底温度对脉冲激光淀积法制备的ＬｉＮｂＯ３薄膜取向的影响．在衬底温度为６００℃和外加电场为７Ｖ／ｃｍ的条件下，在石英玻璃等非晶态衬底上获得了完全（００１）取向的ＬｉＮｂＯ３薄膜．在对具有自发极化的ＬｉＮｂＯ３在电场作用下成核生长机制和温度对ＬｉＮｂＯ３自发极化强度的影响进行分析的基础上，给出了低电场诱导铁电薄膜取向生长的物理依据
The effects of low electric field and substrate temperature on the orientation of LiNbO3 thin films prepared by pulsed laser deposition are reported. A fully (001) -oriented LiNbO3 thin film was obtained on an amorphous substrate such as quartz glass at a substrate temperature of 600 ° C and an applied electric field of 7 V / cm. Based on the analysis of the mechanism of spontaneous polarization of LiNbO3 under the action of electric field and the influence of temperature on the spontaneous polarization of LiNbO3, the physical basis of the orientation growth of low-field induced ferroelectric thin films