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A comparative study of two kinds of oxidants (H2O and O3) with the combination of two metal precursors (TMA and La(iprCp)3) for atomic layer deposition (ALD) La2O3/Al2O3 nanolaminates is carried out.The effects of different oxidants on the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates are studied.Initial testing results indicate that La2O3/Al2O3 nanolaminates could avoid moisture absorption in the air after thermal annealing.However,moisture absorption occurs in H2O-based La2O3/Al2O3 nanolaminates due to the residue hydroxyl/hydrogen groups during annealing.As a result,roughness enhancement,band offset variation,low dielectric constant and poor electrical characteristics are measured because the properties of H2O-based La2O3/Al2O3 nanolaminates are deteriorated.Addition thermal annealing effects on the properties of O3-based La2O3/Al2O3 nanolaminates indicate that O3 is a more appropriate oxidant to deposit La2O3/Al2O3 nanolaminates for electron devices application.