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对未掺杂的In_(0.22)Ga_(0.78)As/GaAs量子阱材料开展了能量为1 MeV、电子注量达1×1016/cm~2的电子束辐照实验。实验结果显示,电子束轰击量子阱材料,通过能量传递在材料中引入缺陷,导致光致发光减弱;电子束辐照后的量子阱中同时存在应力释放和原子互混现象,导致量子阱的发光峰先红移后蓝移;辐照后的量子阱发光波长取决于应变弛豫和扩散的共同作用。
Electron beam irradiation experiments were carried out on undoped In 0.22 Ga 0.78 As / GaAs quantum well materials with energy of 1 MeV and electron injection of 1 × 10 16 / cm 2. The experimental results show that electron beam bombardment of quantum well material, introduction of defects in the material by energy transfer, resulting in reduced photoluminescence; electron beam irradiation in the quantum well stress relief simultaneously exist and the phenomenon of atomic mixing, resulting in quantum well light The peak shifts to blue after redshift. The wavelength of the irradiated quantum well depends on the combination of strain relaxation and diffusion.