测试了单晶连铸铝线材的室温导电性能，单晶连铸工业纯铝的电阻率平均为２．６４５５×１０－８Ωｍ，比金属型多晶试样表面细晶区降低１１．５％，比中心粗晶区降低８．１％。晶界的有无对电阻率的影响很大，而晶界的多少对电阻率的影响较小。晶界对电阻率的影响，归因于晶界上大量存在的空位、位错及杂质对电子散射的综合效应。 The room temperature electrical conductivity of single crystal continuous casting aluminum wire was tested. The average electrical resistivity of single crystal continuous casting industrial pure aluminum was 2.6455 × 10-8Ωm, which was 11.5% lower than that of the fine grain region on the surface of metallic polycrystalline sample. Lower than the center coarse grain area 8.1%. The presence or absence of grain boundaries has a great effect on the resistivity, while the number of the grain boundaries has less effect on the resistivity. The influence of grain boundaries on the resistivity is attributed to the combined effect of the large number of vacancies, dislocations and impurities on the electron scattering at grain boundaries.