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采用脉冲激光沉积方法在单晶Si(100)衬底上制备出c轴取向的Zn1-xMgxO单晶薄膜,通过荧光光谱仪研究了薄膜的光致发光特性.实验结果表明,Mg含量增加,Zn1-xMgxO单晶薄膜的紫外发光峰蓝移,发光峰强度减弱,缺陷发光强度增强.同时发现,由于Mg的掺杂,引入了一些束缚能较大的局域束缚态.对于氧气氛下制备的样品,实验发现紫外峰和绿光带发光峰同时增强,但是R值减小,紫外峰红移.对绿光发光机理研究发现,绿光发光带主要与锌空位、氧间隙(Oi)或锌位氧(OZn)等缺陷有关,它是由多个缺陷发光峰组成,各缺陷发光峰强度相对变化导致了绿光发光带的整体移动.
The c-axis oriented Zn1-xMgxO single crystal thin films were prepared by pulsed laser deposition on a single-crystal Si (100) substrate and the photoluminescence properties of the films were investigated by fluorescence spectroscopy.The experimental results show that the content of Mg1- xMgxO single crystal thin film blue-shifted ultraviolet light-emitting peak, the emission peak intensity weakened, the defect enhanced luminous intensity.At the same time, due to the doping of Mg, some of the binding energy into a larger state bound state for oxygen samples prepared under the atmosphere , We found that both UV peak and green band luminescence peak increase at the same time, but the R value decreases and the UV peak shifts red.Research on the mechanism of green luminescence reveals that the green luminescence band mainly interacts with zinc vacancy, oxygen gap (Oi) or zinc Oxygen (OZn) and other defects related to it is composed of a number of defect luminescence peak composition, the relative emission intensity of each defect led to the overall green glow band movement.