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The effect of drain–source voltage on AlGaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that AlGaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain–source voltage(VDS/ is decreased. Moreover,the relatively low VDSand large drain–source current(IDS/ result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low V_DS leads to a relatively low electric field, which leads to the decline of the thermal resistance.
The effect of drain-source voltage on AlGaAs / InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that the AlGaAs / InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage (VDS / The decreased number of VDS and large drain-source current (IDS / result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low V_DS leads to a relatively low electric field, which leads to the decline of the thermal resistance.