研究了Cr Si Al和Cr Si Al N两种薄膜的微观结构及电性能。结果表明 :溅射态非晶Cr Si Al和Cr Si Al N薄膜在加热到 70 0℃的过程中 ,将析出两种晶化相 ,即Cr(Al,Si) 2 和Si微晶相 ;氮元素加至Cr Si Al非晶膜中 ,将阻碍其中晶化相的形核与长大 ;与Cr Si Al薄膜相比 ,Cr Si Al N薄膜欲获得较小电阻温度系数 (TCR)需要更高的退火温度 ;Cr Si Al N电阻膜具有更高的电学稳定性。 The microstructures and electrical properties of Cr Si Al and Cr Si Al N thin films were studied. The results show that during the heating to 700 ℃, two kinds of crystallized phases, Cr (Al, Si) 2 and Si microcrystalline phases, will be precipitated in the sputtered amorphous Cr Si Al and Cr Si Al N thin films. Element added to the Cr Si Al amorphous film will hinder the nucleation and growth of the crystallized phase therein; the Cr Si Al N thin film needs higher resistance temperature coefficient (TCR) to be higher than that of the Cr Si Al thin film Annealing temperature; Cr Si Al N resistance film has a higher electrical stability.