论文部分内容阅读
本文介绍自制具有极高分辨率的微机控制的三晶体X射线衍射仪。利用这台仪器测量了用MOCVD方法生长的Ga_(0.52)In_(0.48)P外延层的超结构。我们发现,在Ga_(0.52)In_(0.48)P外延薄膜内由In平面和Ga平面交替组成的(111)平面中,存在着交替的In丰与Ga丰平面。这种In丰与Ga丰的附加浓度可达4～6%。
This article describes the home-made with high resolution microcomputer-controlled three-crystal X-ray diffractometer. The super structure of Ga_ (0.52) In_ (0.48) P epitaxial layer grown by MOCVD method was measured by this instrument. We found that there are alternating In abundance and Ga abundance planes in the (111) planes that are alternately composed of In plane and Ga plane in the Ga_ (0.52) In_ (0.48) P epitaxial film. The additional abundance of In abundance and Ga Feng up to 4 ~ 6%.