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在SiC衬底上制备得到了表面钝化氮化硅(SiN)的AlGaN/Ga N高电子迁移率场效应晶体管(HEMTs)。采用高电子浓度的AlGaN/GaN异质结材料、90 nm T型栅、100 nm SiN表面钝化、低欧姆接触以及较短漏源间距等方法来提升器件性能。在Vgs=4 V时器件的最大漏源饱和电流密度为1.72 A/mm,最大跨导为305 m S/mm,此结果为国内报道的AlGaN/GaN HEMT器件最大漏源饱和电流密度。此外,栅长为90 nm T型栅器件的电流增益截止频率(fT)为109GHz,最大振荡频率(fmax)为144 GHz。
Surface-passivated silicon nitride (SiN) AlGaN / Ga N high electron mobility field effect transistors (HEMTs) were prepared on SiC substrate. Devices such as AlGaN / GaN heterojunction with high electron concentration, 90 nm T-type gate, 100 nm SiN surface passivation, low ohmic contact, and shorter drain-source spacing are used to enhance device performance. The maximum drain-source saturation current density is 1.72 A / mm and the maximum transconductance is 305 m S / mm at Vgs = 4 V. The result is the maximum drain-source saturation current density of AlGaN / GaN HEMT devices reported in China. In addition, the current gain cut-off frequency (fT) of a 90-nm gate-T gate device is 109 GHz and the maximum oscillation frequency (fmax) is 144 GHz.